Quarter-micrometer GaAs Schottky barrier diode with high video responsivity at 118 μm
- 20 July 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (3) , 294-296
- https://doi.org/10.1063/1.107944
Abstract
A quarter-micrometer diameter Schottky barrier mixer diode has been fabricated on n+ GaAs using electron beam lithography and reactive ion etching (RIE). The anodes were formed using a Pt/Au electroplate technique. The diode zero-bias capacitance of 0.25 fF and series resistance of about 25 Ω, measured at dc, correspond to a ‘‘figure-of-merit’’ cuttoff frequency of about 25 THz. The video responsivity at 118 μm (2540 GHz) was as high as 200 V/W, over three times higher than the best previously reported. The design, fabrication, and evaluation of this diode is described.Keywords
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