Defect trapping of ion-implanted deuterium in Fe
- 1 September 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (9) , 5710-5719
- https://doi.org/10.1063/1.326761
Abstract
The trapping of ion‐implanted deuterium (D) by lattice damage in Fe was investigated in the temperature range 90–500 K. The D depth profile was determined by measuring the proton yield from the 3He‐excited nuclear reaction D(3He,p)4He, and the D lattice location was obtained by ion channeling. Linear ramping of the temperature produced a sharp detrapping stage at 260 K and a broader release extending over 350–450 K. The release‐vs‐temperature data were analyzed by solving the diffusion equation with appropriate trapping terms, yielding 0.48 and ?0.81 eV for the binding enthalpies associated with the two stages. The 0.48‐eV trap corresponds to D at a near‐octahedral interstitial site, where it is believed to be associated with a vacancy.This publication has 17 references indexed in Scilit:
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