Partial separations of extended α and β dislocations in II–VI semiconductors
- 1 March 1986
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 53 (3) , 307-320
- https://doi.org/10.1080/01418618608242833
Abstract
The dissociation widths of extended dislocations in CdTe, CdS and ZnTe have been measured using the weak-beam technique of electron microscopy, for α and β dislocations separately. Values of the stacking-fault energies have been determined. The experimental results agree with the modified ionic charge model of dislocations in the II–VI semiconductors, and not with the pure ionic model.Keywords
This publication has 17 references indexed in Scilit:
- Dislocation structure and motion in CdSPhilosophical Magazine A, 1986
- PLASTIC DEFORMATION OF II-VI COMPOUNDS WITH SPHALERITE STRUCTURE : EXAMPLE ZnSe, ZnTeLe Journal de Physique Colloques, 1983
- Dissociation of dislocations in diamondProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1983
- A simple method for the determination of structure-factor phase relationships and crystal polarity using electron diffractionJournal of Applied Crystallography, 1982
- Analysis of the stacking faults of dissociated glide dislocations in F.C.C. metalsPhysica Status Solidi (a), 1981
- Gliding dissociated dislocations in hexagonal CdSPhilosophical Magazine A, 1980
- Charged dislocations and the plastic deformation of II-VI compoundsPhilosophical Magazine A, 1980
- The Structure And Electrical Properties Of Dislocations In SemiconductorsJournal of Microscopy, 1980
- The dissociation of dislocations in GaAsPhilosophical Magazine A, 1978
- Crystallographic Polarity in the II-VI CompoundsJournal of Applied Physics, 1962