Implantation Temperature Dependent Deep Level Defects in 4H-SiC

• 1 January 2001
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 353-356, 443-446
• https://doi.org/10.4028/www.scientific.net/msf.353-356.443

Abstract

Keywords

• DEEP LEVEL
• DLTS
• IMPLANTATION
• S-LEVEL
• TEMPERATURE STABLE DEFECTS