Exposure dose optimization for a positive resist containing polyfunctional photoactive compound

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Abstract
Methods for optimizing the photolithographic process with respect to exposure dose are described. Various latent image gradients (the photoactive compound gradient, the dissolution rate gradient, and the log dissolution rate gradient) at the mask edge in the resist film are compared as a function of exposure dose. The relationship between the sequential photochemical decomposition of poly-diazonaphthoquinone photoactive compound, dissolution models and the dissolution selectivity parameter n is discussed. A methodology using full scale simulation to explore the effect of exposure sizing dose upon resist profile sidewall angle, exposure latitude, focus range, and linewidth variation with resist thickness (swing ratio) is described and compared to simpler models based upon the use of latent image gradients. Finally, the correspondence between simulation and experiment is explored.

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