Filling of micron-sized contact holes with copper by energetic cluster impact
- 1 September 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 12 (5) , 2925-2930
- https://doi.org/10.1116/1.578967
Abstract
A completely ionized and clustered beam of Mo or Cu is deposited with variable kinetic energy on a substrate, and the filling of micron-sized contact holes on semiconductor devices is studied. An excellent hole filling is obtained for the impact of charged copper clusters, if they contain 1000–3000 Cu atoms and impinge with a kinetic energy of about 10 eV per atom on a substrate having a temperature of 500 K. The morphology of small hole fillings by slow and energetic cluster impact is discussed.This publication has 0 references indexed in Scilit: