Electron transport of (Al,Ga)Sb/InAs heterojunctions prepared by molecular beam epitaxy

13 August 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (17) , 917-919
https://doi.org/10.1049/el:19870648

Abstract

Molecular beam epitaxial growth of (Al,Ga)Sb/InAs hetero-structures is described. Electron transport studies indicate that these heterojunctions are of high quality. Shubnikov-de Haas measurement of the AlSb/InAs/GaSb quantum well shows a two-dimensional electron gas of concentration 2×10¹²cm² and a low-temperature mobility approaching 10⁵cm²/Vs. Low-temperature capacitance/voltage measurement indicates that the thin AlSb barrier is a classical Mott-type barrier.

Keywords

EPITAXIAL GROWTH
ELECTRON TRANSPORT
TWO-DIMENSIONAL ELECTRON GAS
(ALGA)SB-INAS
CLASSICAL MOTT-TYPE BARRIER
MOLECULAR BEAM EPITAXY
THIN ALSB BARRIER
SEMICONDUCTOR SUPERLATTICES
LOW-TEMPERATURE MOBILITY
ALSB-INAS-GASB QUANTUM WELL
CAPACITANCE/VOLTAGE MEASUREMENT
SHUBNIKOV-DE HAAS MEASUREMENT
(AL
GA)SB/INAS HETEROJUNCTIONS

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