Abstract
A study of photodimerization of 9-cyanoanthracene single crystals has been performed by following the growth of 4-sided photoetched pits as a function of time, light intensity, and temperature. Growth along the [001] diagonal direction of the pits on the (010) plane is linear in both time and light intensity with an activation energy of 0.75 eV. This suggests that one photon absorption occurs to form the cis-oriented excimer, followed by a rate controlling, thermally activated, re-orientation to the trans-oriented excimer on the perimeter of the etch pit, followed by rapid formation of the transphotodimer.

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