Photoluminescence studies of theEL2 defect in gallium arsenide under external perturbations
- 1 July 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 67 (1) , 112-115
- https://doi.org/10.1103/physrevlett.67.112
Abstract
The fine structure in the 0.61-eV photoluminescence band from the deep defect EL2 in semi-insulating GaAs has been studied under uniaxial stress and magnetic field. The results show no deviation from full symmetry and hence support the isolated-arsenic-antisite model of EL2. Measurements of both the shift due to the hydrostatic component of the stress as well as the g factor of the final state of the transition confirm the identification of this photoluminescence with EL2.
Keywords
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