Effect of residual doping on optimum structure of multiquantum-well optical modulators
- 23 April 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (9) , 439-440
- https://doi.org/10.1049/el:19870316
Abstract
Using a variational method we have calculated the effect of residual doping on the optimum structure of multiquantum-well (MQW) optical modulators which utilise the quantum confined Stark effect. Residual doping gives a nonuniform electric field and a degraded modulation depth. For example, for a structure consisting of 100 Å GaAs wells and 100 Å Ga0.7A10.3As barriers, we calculate the optimum number of wells to be 20 for a doping of 5 × 1015 cm−3.Keywords
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