Oxygen behavior of normal and HIP sintered A1N
- 1 January 1989
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 50 (10) , 1009-1012
- https://doi.org/10.1016/0022-3697(89)90501-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Nonmetallic crystals with high thermal conductivityPublished by Elsevier ,2004
- Temperature Dependence of Thermal Coefficients for HIPped Silicon NitrideJournal of the Ceramic Society of Japan, 1989
- Effect of Silicon Dioxide on the Thermal Diffusivity of Aluminum Nitride CeramicsJournal of the American Ceramic Society, 1988
- Production of Ultrafine Yttria Powder and Its Application of Low Temperature Sintering Aluminium NitrideJournal of the Ceramic Society of Japan, 1988
- Influence of Gas Pressure on HIP Sintered Silicon, Nitride and Stability of Carbon ImpurityJournal of the Ceramic Society of Japan, 1988
- Evaluation of Carbon Behavior in HIP'ed Silicon NitrideJournal of the Ceramic Society of Japan, 1988
- Behavior of Carbon in Hot Pressed Silicon Nitride Grain Boundaries and Its Influence on Mechanical PropertiesJournal of the Ceramic Society of Japan, 1988
- The intrinsic thermal conductivity of AINJournal of Physics and Chemistry of Solids, 1987
- Sintering Process of Translucent AlN and Effect of Impurities on Thermal Conductivity of AlN CeramicsJournal of the Ceramic Association, Japan, 1985
- The Effect of Oxygen Impurity on High Temperature Thermal Conductivity of AINJournal of the Ceramic Association, Japan, 1973