Short-channel effects in AlGAN/GaN HEMTs
- 4 May 2001
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 82 (1-3) , 238-240
- https://doi.org/10.1016/s0921-5107(00)00747-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substratesIEEE Electron Device Letters, 1998
- High Frequency AlGaN/GaN MODFET'sMRS Internet Journal of Nitride Semiconductor Research, 1997
- Models for contacts to planar devicesSolid-State Electronics, 1972