A novel diagonal-current injection VCSEL design proposed for nitride lasers

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Abstract
An advanced three-dimensional optical-electrical model has been used for nitride lasers to design a novel vertical-cavity surface-emitting laser (VCSEL) configuration with a diagonal-current injection (DCI) mechanism. The design has been optimized for the lowest room-temperature (RT) lasing threshold which has been found to be similar to RT thresholds of advanced arsenide and phosphide VCSELs. The DCI nitride VCSEL demonstrates very promising anticipated RT threshold characteristics. Its optical structure is very selective: the fundamental mode exhibits distinctly the lowest threshold. In addition, the lasing threshold has been found to be exponentially proportional to the barrier width.