Unoccupied surface states of (1×1) Sb overlayers on GaAs(110) and InP(110)
- 15 January 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (2) , 855-857
- https://doi.org/10.1103/physrevb.37.855
Abstract
Unoccupied electronic states of an ordered (1×1) Sb overlayer on cleaved GaAs(110) and InP(110) surfaces are studied by angle-resolved inverse photoemission. A well-ordered overlayer is obtained by thermal annealing after room-temperature deposition of Sb onto freshly cleaved surfaces. At Γ¯ we observe a clearly resolved Sb-derived surface resonance at 2.1 eV above the valence-band maximum for GaAs as well as for InP. An upward dispersion of the Sb state of 0.2 eV is found towards X¯.Keywords
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