Electron mobility in n-InSb from 77 to 300K
- 5 February 1975
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 9 (4) , L89-L91
- https://doi.org/10.1088/0022-3719/9/4/002
Abstract
The temperature dependence of the Hall coefficient RH, and conductivity sigma of n-InSb in the range 77-300K has been determined using the Van der Pauw technique. The experimental values of the Hall mobility are analysed in the relaxation time approximation for both the parabolic and non-parabolic cases, considering electron scattering by ionized impurities, polar optical phonons and acoustic deformation potential. The influence of electron-electron scattering on polar optical and ionized impurities has also been studied.Keywords
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