Dielectric polarization relaxation measurement in α-SiO2 by means of a scanning electron microscope technique
- 15 July 1993
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (2) , 1250-1255
- https://doi.org/10.1063/1.354928
Abstract
A scanning electron microscope is used as a tool to study dielectric relaxation processes in α‐SiO2 by measuring the leakage current in the sample surrounded by a metallic aperture. A transient time (tt) of the order of a few seconds appears before the steady‐state current is established. The time dependence of the trapping rate is found to follow a power law and to be related to relaxation processes of a dielectric under electrical and thermal stress.This publication has 12 references indexed in Scilit:
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