Correlation between substrate and gate currents in MOSFET's
- 1 November 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (11) , 1740-1744
- https://doi.org/10.1109/t-ed.1982.21019
Abstract
A correlation between substrate and gate currents in MOSFET's is described and analyzed. Both of these currents are the result of hot-electron mechanisms. Theory for these mechanisms has been applied to derive an expression for gate current in terms of substrate current and parameters that can be calculated from processing data and bias conditions. The theory is successfully applied to a series of n-channel MOSFET's with a range of geometries and bias values.Keywords
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