Molecular beam epitaxy growth and properties of GaAs/(AlGa)As p-type heterostructures on (100), (011), (111)B, (211)B, (311)B, and (311)A oriented GaAs
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150 (1-4) , 446-450
- https://doi.org/10.1016/0022-0248(94)00712-8
Abstract
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