Ridge waveguide distributed Bragg reflector InGaAs/GaAsquantum well lasers
- 14 April 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (8) , 651-653
- https://doi.org/10.1049/el:19940426
Abstract
A single growth step ridge waveguide InGaAs/GaAs quantum well laser with one third-order distributed Bragg reflector (DBR) and one cleaved facet is described. The DBR is fabricated with direct write electron beam lithography and transferred into the epilayers by reactive ion etching. These devices operate on a single longitudinal and fundamental lateral mode, with a threshold current of 23 mA and more than 30 dB of sidemode suppression.Keywords
This publication has 8 references indexed in Scilit:
- Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum-well lasersIEEE Photonics Technology Letters, 1993
- Four wavelength distributed feedback ridge waveguide quantum-well heterostructure laser arrayApplied Physics Letters, 1992
- Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laserIEEE Photonics Technology Letters, 1992
- A comparative study of wet and dry selective etching processes for GaAs/AIGaAs/lnGaAs pseudomorphic MODFETsJournal of Electronic Materials, 1992
- Semiconductor lasers for coherent optical fiber communicationsJournal of Lightwave Technology, 1990
- Spectral characteristics for 1.5 µm DBR laser with frequency-tuning regionIEEE Journal of Quantum Electronics, 1987
- Wavelength stabilisation of 1.5 μm GaInAsP/InP bundle-integrated-guide distributed-Bragg-reflector (BIG-DBR) lasers integrated with wavelength tuning regionElectronics Letters, 1986
- A novel GaInAsP/InP distributed feedback laserApplied Physics Letters, 1985