MOCVD manifold switching effects on growth and characterization
- 2 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 109 (1-4) , 246-251
- https://doi.org/10.1016/0022-0248(91)90186-9
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- The effect of frictional stress on the calculation of critical thickness in epitaxyJournal of Applied Physics, 1990
- Investigation of the asymmetric misfit dislocation morphology in epitaxial layers with the zinc-blende structureJournal of Applied Physics, 1990
- Mechanical properties of thin filmsMetallurgical Transactions A, 1989
- Surface stress effects on the critical film thickness for epitaxyApplied Physics Letters, 1989
- An exactly solvable model for calculating critical misfit and thickness in epitaxial superlattices: Layers of equal elastic constants and thicknessesJournal of Applied Physics, 1988
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970
- Evidence for pseudomorphic growth of iron on copperPhilosophical Magazine, 1967
- On the Stresses and Energies associated with Inter-Crystalline BoundariesProceedings of the Physical Society. Section A, 1950