Low‐temperature formation of local Al contacts to a‐Si:H‐passivated Si wafers
- 28 January 2004
- journal article
- research article
- Published by Wiley in Progress In Photovoltaics
- Vol. 12 (1) , 47-54
- https://doi.org/10.1002/pip.522
Abstract
We have passivated boron‐doped, low‐resistivity crystalline silicon wafers on both sides by a layer of intrinsic, amorphous silicon (a‐Si:H). Local aluminum contacts were subsequently evaporated through a shadow mask. Annealing at 210°C in air dissolved the a‐Si:H underneath the Al layer and reduces the contact resistivity from above 1 Ω cm2to 14·9 m Ω cm2. The average surface recombination velocity is 124 cm/s for the annealed samples with 6% metallization fraction. In contrast to the metallized regions, no structural change is observed in the non‐metallized regions of the annealed a‐Si:H film, which has a recombination velocity of 48 cm/s before and after annealing. Copyright © 2004 John Wiley & Sons, Ltd.Keywords
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