SATURATED OPTICAL ABSORPTION THROUGH BAND FILLING IN SEMICONDUCTORS
- 15 January 1969
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (2) , 73-74
- https://doi.org/10.1063/1.1652718
Abstract
If a monochromatic light beam absorbed by a semiconductor generates enough carriers to fill band states up to and including those of the optical transition, the optical absorption will be saturated and a condition of transparency should result. Analysis shows that in this regime the absorption coefficient varies inversely with light intensity.Keywords
This publication has 3 references indexed in Scilit:
- Band structure of HgTe and HgTe-CdTe alloysSolid State Communications, 1964
- Optical Absorption in Pure Single Crystal InSb at 298° and 78°KPhysical Review B, 1959
- Infra-red Absorption in SemiconductorsReports on Progress in Physics, 1956