Transient-enhanced Diffusion Of Iridium And Its Eflects On Electrical Characteristics Of Deep Sub-micron nMOSFETs
- 1 January 1997
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Diffusion parameters of indium for silicon process modelingJournal of Applied Physics, 1996
- A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditionsSolid-State Electronics, 1994