Dielectric Characteristics of Tantalum Anodic Films as Related to Film Structure

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Abstract
The variation of the dielectric characteristics of tantalum anodic films cannot be explained on the basis of bulk metal impurities alone. Very thin films on the metal surface influence the structural properties and leakage current characteristics of anodic films formed thereon. Sufficiently long exposure to hydrofluoric acid removes these films leaving clean metallic tantalum exposed and when this is anodized excellent anodic oxide films result. These anodic films are crystalline in structure (distorted ) as opposed to amorphous films previously associated with good dielectric tantalum anodic films. Electron diffraction and spectrographic data support the above views by quantitatively identifying the metallic impurities in electrolytic grade tantalum and tentatively identifying the structures of the various films on tantalum foil.

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