Optical emission properties of metal/InP and GaAs interface states

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Abstract
We have measured optical emission from interface states formed by metal deposition on UHV-cleaved InP(110) and GaAs(110) surfaces by means of cathodoluminescence spectroscopy. Our study reveals discrete levels distributed over a wide range of energies and localized at the microscopic interface. Our results demonstrate the influence of the metal, the semiconductor, and its surface morphology on the energy distributions. The detailed evolution of optical emission energies and intensities with multilayer metal deposition exhibits a strong correlation between the deep gap levels, the Fermi level movements, and Schottky barrier heights. The results demonstrate that in general electronic states deep within the band gap continue to evolve beyond monolayer coverage into the metallic regime.

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