A distributed MOS attenuator
- 1 April 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 55 (4) , 562-563
- https://doi.org/10.1109/PROC.1967.5587
Abstract
A wideband electrically controllable resistive attenuator using a distributed MOS transistor is described. Bandwidth and attenuation for lumped and distributed structures are compared and a quality factor is defined. Some exmples of application for controlling the gain of amplifiers are also given.Keywords
This publication has 0 references indexed in Scilit: