Estimation of impurity profiles in ion-implanted amorphous targets using joined half-Gaussian distributions
- 1 June 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (11) , 568-569
- https://doi.org/10.1063/1.1654511
Abstract
A probability distribution function appropriate for nonsymmetrical impurity distributions in ion‐implanted targets is defined to consist of two half‐Gaussian distributions that join at a modal projected range RM . For projected distances Xp Rm the distribution has standard deviation σ2. For appropriate choices of RM , σ1, and σ2, the proposed distribution is found to provide an extremely good fit for experimental impurity profiles.Keywords
This publication has 1 reference indexed in Scilit:
- The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into SiliconJournal of the Electrochemical Society, 1971