Quantum-dot quantum well CdS/HgS/CdS: Theory and experiment

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Abstract
An extended theoretical approach for calculating the 1s-1s electronic transition in spherically layered semiconductor quantum dots is presented. The extension over the common effective-mass approximation includes the implementation of the Coulomb interaction and finite potential wells at the particle boundaries. The calculations are carried out for the quantum-dot quantum well CdS/HgS/CdS and compared to recently available experimental results. The wave functions of electrons and holes spreading over the entire structure and the probabilities of presence in the different layers, as well as outside the structure in the surrounding dielectric water, are presented.