Planar-junction, top-illuminated GainAs/InP pin photodiode with bandwidth of 25 GHz

20 July 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (15) , 967-969
https://doi.org/10.1049/el:19890647

Abstract

A top-illuminated GaInAs/InP pin photodiode has been produced in a planar-junction configuration, which combines high reliability (no change in dark current over 4700 h at 175°C) with the widest bandwidth (25 GHz), and highest quantum efficiency (80% at 1.55 μm), yet reported for this type of device.

Keywords

QUANTUM EFFICIENCY
80 PERCENT
GAINAS-INP
25 GHZ
175 DEGC
BANDWIDTH
PIN PHOTODIODE
DARK CURRENT
TOP-ILLUMINATED
1.55 MICRON
PLANAR-JUNCTION CONFIGURATION