Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1S)
- https://doi.org/10.1143/jjap.33.404
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Hole generation by icosahedral B12 in high-dose boron as-implanted siliconApplied Physics Letters, 1993
- High-concentration boron diffusion in silicon: Simulation of the precipitation phenomenaJournal of Applied Physics, 1990
- State of boron in chemical vapour-deposited SiC-B composite powdersJournal of Materials Science Letters, 1990
- The crystal structure of SiB6Journal of Solid State Chemistry, 1986
- Coordination Number of Doped Boron Atoms in Photochemically-Deposited Amorphous Silicon Studied by X-Ray Photoelectron SpectroscopyJapanese Journal of Applied Physics, 1986
- Boron implantations in silicon: A comparison of charge carrier and boron concentration profilesApplied Physics A, 1974
- The Role of Damage in the Annealing Characteristics of Ion Implanted SiJournal of the Electrochemical Society, 1970
- Über die Bildung der tetragonalen Bormodifikation durch Substitution der Berylliumatome im Gitter des BeB12Zeitschrift für anorganische und allgemeine Chemie, 1963
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960
- The electronic structure of an icosahedron of boron atomsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1955