Two-dimensional ordering of self-assembled InxGa1−xAs quantum dots grown on GaAs(311)B surfaces
- 25 October 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 206 (4) , 279-286
- https://doi.org/10.1016/s0022-0248(99)00224-9
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- SiGe Island Shape Transitions Induced by Elastic RepulsionPhysical Review Letters, 1998
- Formation of High-Density Quantum Dot Arrays by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1997
- Nanoscale Structuring by Misfit Dislocations inEpitaxial SystemsPhysical Review Letters, 1997
- Self-Organization in Growth of Quantum Dot SuperlatticesPhysical Review Letters, 1996
- Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAsPhysical Review Letters, 1996
- Spontaneous Ordering of Arrays of Coherent Strained IslandsPhysical Review Letters, 1995
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Structural characterization of (In,Ga)As quantum dots in a GaAs matrixPhysical Review B, 1995
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Self-organized growth of strained InGaAs quantum disksNature, 1994