Stretching quantum wells: A method for trapping free carriers in GaAs heterostructures
- 4 October 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (14) , 2059-2061
- https://doi.org/10.1063/1.124915
Abstract
We have demonstrated a method of using inhomogeneous stress to create an in-plane harmonic potential in GaAs quantum wells which works equally well for excitons and for free conduction electrons. The depth of the well can be continuously varied via an external control. This essentially provides a type of gate for controlling the motion of carriers, e.g., a two-dimensional electron gas, without using electric field.Keywords
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