Ka-band monolithic VCOs for low noise applications using GaInP/GaAs HBTs
- 17 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 165-168
- https://doi.org/10.1109/mcs.1994.332112
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- High power and high efficiency monolithic HBT VCO circuitPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- InP based HBT millimeter-wave technology and circuit performance to 40 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High speed selfaligned GaInP/GaAs HBBTsElectronics Letters, 1993
- Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistorIEEE Electron Device Letters, 1993
- GaAs bipolar transistors with a Ga/sub 0.5/In/sub 0.5/P hole barrier layer and carbon-doped base grown by MOVPEIEEE Transactions on Electron Devices, 1992