Stacked MOSFET's in a single film of laser-recrystallized PolySilicon

1 August 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (8) , 191-193
https://doi.org/10.1109/edl.1982.25547

Abstract

The feasibility of building stacked MOSFET's in a single laser recrystallized polysilicon film is demonstrated. Devices fabricated in this initial study use separate gates to obtain independent enhancement mode behavior on each surface of the recrystallized film. The transistors worked simultaneously and inverter action was demonstrated using a CMOS configuration.

Keywords

SILICON
LASER MODES
MOSFETS
SUBSTRATES
SEMICONDUCTOR FILMS
LABORATORIES
INVERTERS
CMOS TECHNOLOGY
LIQUID CRYSTAL DISPLAYS
DECODING

This publication has 0 references indexed in Scilit: