Flash Evaporation and Thin Films of Cuprous Sulfide, Selenide, and Telluride
- 1 June 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (7) , 2906-2912
- https://doi.org/10.1063/1.1710022
Abstract
Films of Cu1.8S have been made by flash evaporation. They have a resistivity of 6.2×10−4Ω·cm and an absorption coefficient to 1.5 eV radiation of 1.13×103 cm−1. The corresponding quantities for Cu1.8Se are: 1.6×10−4Ω·cm, and 1.18×103 cm−1. The resistivity of Cu1.8Te films increases with time. It is found that if during flash evaporation the ratio of partial pressures of Cu and Se at the substrate fluctuates then the film does not have the composition of the charge. Cu1.8S has potential applications for producing transparent conducting coatings on substrates which cannot be heated above room temperature.This publication has 4 references indexed in Scilit:
- GaAs thin-film solar cellsIEEE Transactions on Electron Devices, 1967
- Electrical conduction and self-diffusion in cuprous selenide at high temperatureJournal of Physics and Chemistry of Solids, 1966
- Optical Properties of Cuprous SulfideJournal of Applied Physics, 1965
- A Method for the Evaporation of AlloysJournal of Applied Physics, 1948