Analysis of Photojunctions Formed by Diffusing Copper into Insulating Cadmium Sulfide Crystals

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Abstract
A study of the observed photovoltaic, photorectification, and field effect modulation properties of junctions formed by diffusing copper into photoconductive, dark-insulating CdS crystals shows that two potential barriers are produced, one at the surface, the other in the crystal bulk. A transition from a double space charge dipole to a single separated dipole occurs at a reverse bias of less than 1 v. A corresponding transition from a primary to a secondary photocurrent process results. Values for the drift mobility of holes ranging from 10−5–10−2 cm2/v-sec were derived from field effect measurements and found to be proportional to illumination intensity at the infrared quenching wavelengths.