Growth kinetics of GaN grown by gas-source molecular beam epitaxy
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 89-93
- https://doi.org/10.1016/s0022-0248(96)01020-2
Abstract
No abstract availableFunding Information
- U.S. Air Force (F33615-95-C-1765)
- National Research Council
- Air Force Office of Scientific Research
This publication has 4 references indexed in Scilit:
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- Desorption mass spectrometric control of composition during MBE growth of AlGaAsJournal of Crystal Growth, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992