Threshold reduction of 1.3 μm GaInAsP/InP surface emitting laser by a maskless circular planar buried heterostructure regrowth
- 18 February 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (4) , 331-332
- https://doi.org/10.1049/el:19930224
Abstract
A newly introduced maskless planar buried heterostructure regrowth has substantially improved the regrown heterointerface of a 1.3 μm GaInAsP/InP circular buried heterostructure surface emitting laser. The threshold current of the 12 μmφ device was reduced to 2.2 mA at 77 K under CW conditions.Keywords
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