Relevance of persistent photoconductivity in semi-insulating andn-type semiconducting GaAs to the charge state of metastableEL2 defects
- 15 August 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (5) , 3610-3613
- https://doi.org/10.1103/physrevb.38.3610
Abstract
We make use of persistent photoconductivity studies in GaAs to address the question of the charge state of EL2 defects which is a point of contention in current theories of their metastability. We first review conflicting interpretations of persistent hole photoconductivity in semi-insulating GaAs and then present new photoconductivity studies for n-type semiconducting GaAs to resolve residual points of conflict. We conclude that there is no evidence for a redistribution of charge in EL2 complexes during the metastable transition. Finally, further arguments based on experiment are presented against current models of a positively charged EL2 complex.Keywords
This publication has 0 references indexed in Scilit: