Accurate measurement technique for base transit time in heterojunction bipolar transistors

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Abstract
The minority electron mobility, which agrees with the prediction of phase-shift analysis and Monte Carlo simulations, in p-typc GaAs base doped to 3.0 × 1019cm−3 of AlGaAs/GaAs HBTs at 300 K has been measured using an accurate measurement technique for the base transit time. The base transit time of the AlxGa1 − xAs/GaAs composition graded base HBT was also measured using this technique.