Numerical calculations of the capacitance of linearly graded Si p-n junctions

6 February 1969

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 5 (3) , 54-55
https://doi.org/10.1049/el:19690037

Abstract

Exact calculations are made of the capacitance of linearly graded Si p-n junctions, taking the influence of electrons and holes into account. The results agree well with the experimental data for gradients of less than 10²²cm⁻⁴. The discrepancies for gradients larger than 10²²cm⁻⁴ are probably due an interface-state mechanism.

Keywords

LINEARLY GRADED
GRADED SI
CAPACITANCE
THAN 1022CM
EXPERIMENTAL
MADE

This publication has 0 references indexed in Scilit: