Extrinsic p-doped HgCdTe grown by direct alloy growth organometallic epitaxy

• 1 May 1991
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 9  (3) , 1705-1708
• https://doi.org/10.1116/1.585403

Abstract

Keywords

• ARSENIC
• CADMIUM TELLURIDE
• FLOW RATE