Electrochemical fabrication of a P-type silicon–polythiophene p–n junction diode
- 1 January 1994
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of the Chemical Society, Chemical Communications
- No. 22,p. 2549-2550
- https://doi.org/10.1039/c39940002549
Abstract
A p–n junction thin film was fabricated by electrochemical deposition of polythiophene on a p-type silicon substrate, followed by controlled-potential electrochemical doping to make the polythiophene layer cation doped.Keywords
This publication has 11 references indexed in Scilit:
- New electrochemically generated organic conducting polymersPublished by Elsevier ,2010
- Deposition of Polyaniline Films onto Porous Silicon LayersJournal of the Electrochemical Society, 1993
- Electrochemically deposited polythiophene. 1. Ohmic drop compensation and the polythiophene paradoxThe Journal of Physical Chemistry, 1990
- Electrochemical generation of polythiophene films on platinum electrodesPolymer, 1988
- A study of the electropolymerization of thiopheneSynthetic Metals, 1988
- Organic semiconducting polymers as molecular material for electronic devicesSynthetic Metals, 1987
- Electrochemical cation doping of a polythienylene filmJournal of the Chemical Society, Chemical Communications, 1985
- Electrochemical doping of polythiophene in aqueous mediumJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1984
- Organic conducting polymers derived from substituted thiophenes as electrochromic materialJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1983
- Synthesis of highly conducting films of derivatives of polyacetylene, (CH)xJournal of the American Chemical Society, 1978