Observation of boron doping induced surface roughening in silicon molecular beam epitaxy
- 3 June 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (23) , 3278-3280
- https://doi.org/10.1063/1.116573
Abstract
Boron doping induced surface roughening was observed in conventional silicon molecular beam epitaxy. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy revealed that as growth continued, the growth surface remained no longer planar but developed {113} facets. The facets evolved along with growth, and finally resulted in a severely roughened surface. The evolution of the roughening was found to remain the same in the boron doping concentration range of 1×1017–2×1020 cm−3 and the growth temperature range of 500–650 °C. This surface roughening effect is attributed to boron segregation behavior.Keywords
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