Raman-scattering study of high-pressure effects on the anisotropy of force constants of hexagonal boron nitride
- 15 October 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 18 (8) , 4440-4443
- https://doi.org/10.1103/physrevb.18.4440
Abstract
Frequency shifts of two species of Raman-active modes in layered hexagonal boron nitride have been measured in the pressure range from 1 bar to 110 kbar at room temperature. From the observed shifts it was found that, while the increase of an intralayer force constant of the crystal was only six percent, the interlayer shear force constant increased by four times as much at 110 kbar compared with the value at 1 bar. The pressure effects on the mode Grüneisen constants of the two distinct modes and on the shear elastic constant of the crystal are discussed.
Keywords
This publication has 21 references indexed in Scilit:
- A low frequency Raman-active vibration of hexagonal boron nitrideSolid State Communications, 1978
- Raman scattering and phonon dispersion in Si and GaP at very high pressurePhysical Review B, 1975
- Calibration of the pressure dependence of the R1 ruby fluorescence line to 195 kbarJournal of Applied Physics, 1975
- Rigid-layer modes in chalcogenide crystalsPhysical Review B, 1974
- Pressure Measurement Made by the Utilization of Ruby Sharp-Line LuminescenceScience, 1972
- Laser excited Raman spectra of samples under very high pressuresChemical Physics Letters, 1968
- High pressure — laser raman spectraInorganic and Nuclear Chemistry Letters, 1968
- X-Ray Diffraction and Optical Observations on Crystalline Solids up to 300 kbarReview of Scientific Instruments, 1967
- Normal Modes in Hexagonal Boron NitridePhysical Review B, 1966
- Infrared studies in the 1- to 15-micron region to 30,000 atmospheresJournal of Research of the National Bureau of Standards Section A: Physics and Chemistry, 1959