Temperature Dependence of the Velocity of Sidewise 180° Domain-Wall Motion in BaTiO3

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Abstract
The velocity of the sidewise 180° domain‐wall motion in single‐crystal BaTiO3 has been measured over a temperature range from 25° to 100°C as a function of the applied electric field. The velocity, described by v = v∞ exp(−δ/E), where δ is the activation field, E the applied electric field, and v∞ the extrapolated wall velocity for E = ∞, increases by about four orders of magnitude with this increase in temperature. It was found that the temperature dependence of v lies primarily in δ and not in v∞. The magnitude of δ decreases with increasing temperature and is also dependent on the impurity concentration in the crystal as well as the crystal thickness. The effects of impurities are most pronounced at room temperature, where (1/δ) (dδ/dT) is 1% °C−1 for undoped samples and 2% °C−1 for Fe doped samples. Though δ itself is very sensitive to the sample thickness, (1/δ) (dδ/dT) does not appear to depend on the crystal thickness. Additional data are required before a critical comparison can be made between experiment and theory.