Growth and properties of graded band-gap AlxGa1−xAs layers
- 15 March 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (6) , 366-368
- https://doi.org/10.1063/1.90807
Abstract
Graded band‐gap AlxGa1−xAs layers were grown using isothermal LPE techniques together with undersaturated solutions. The layer thicknesses were 1500–2500 Å and the value of x in the graded layers increased monotonically to ≈0.8 at the surface. The Al depth profiles, as measured by Auger analyses, are in good agreement with those derived by assuming rapid Al diffusion through the liquid boundary layer resulting from partial dissolution of the substrate surface. It was found that the graded‐layer thickness could be controlled by varying the degree of undersaturation of the solution at any given temperature.Keywords
This publication has 7 references indexed in Scilit:
- Auger profiling of ’’abrupt’’ LPE AlxGa1−xAs-GaAs heterojunctionsJournal of Applied Physics, 1977
- An isothermal etchback-regrowth method for high-efficiency Ga1−xAlxAs-GaAs solar cellsApplied Physics Letters, 1977
- A computer analysis of heterojunction and graded composition solar cellsIEEE Transactions on Electron Devices, 1977
- Theoretical analysis of AlxGa1−xAs-GaAs graded band-gap solar cellJournal of Applied Physics, 1976
- Graded-band-gap pGa1−xAlxAs-nGaAs heterojunction solar cellsJournal of Applied Physics, 1975
- Photovoltaic effects in graded bandgap structuresIEEE Transactions on Electron Devices, 1971
- Generation of an emf in Semiconductors with Nonequilibrium Current Carrier ConcentrationsReviews of Modern Physics, 1957