Thermoelastic stress analysis of pulsed electron beam recrystallization of ion-implanted silicon
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (9) , 4747-4752
- https://doi.org/10.1063/1.328305
Abstract
The time and spatial dependence of the temperature rise produced in ion‐implanted silicon subjected to pulsed electron beam bombardment has been numerically calculated. The temperature profiles generated were then used to calculate the thermoelastic stresses produced by the deposited energy. Experimental measurements of the incident energy density thresholds for fracture of the silicon have beem compared with damage threshold levels suggested by this analysis. The temperature calculations have been qualitatively verified by diffusion profile measurements as compared with calculated profiles based on dopant diffusion in liquid silicon. The shear forces produced by the large temperature gradients have been proposed as the primary cause of fracture which occurs at high beam fluences.This publication has 4 references indexed in Scilit:
- Pulsed-electron-beam annealing of ion-implantation damageJournal of Applied Physics, 1979
- Crystalline to amorphous transformation in ion-implanted silicon: a composite modelJournal of Applied Physics, 1978
- Silicon solar cells by high-speed low-temperature processingIEEE Transactions on Electron Devices, 1977
- A correlation between diffusion and distribution coefficientsSolid-State Electronics, 1963