The Multiple-Tunnel Junction and Its Application to Single-Electron Memory and Logic Circuits
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2S)
- https://doi.org/10.1143/jjap.34.700
Abstract
The multiple-tunnel junction (MTJ) produced by forming a side-gated constriction in δ-doped GaAs is demonstrated as a basic component of single electronics. A single-electron memory cell, in which one bit of information is represented by the excess or lack of a precise number of electrons, was fabricated and the operation was confirmed at liquid helium temperature. A new switching element, the variable-barrier MTJ, and a new circuit, the single-charge injection logic circuit, are proposed.Keywords
This publication has 13 references indexed in Scilit:
- Measurement of single electron lifetimes in a multijunction trapPhysical Review Letters, 1994
- Single-electron memoryJournal of Applied Physics, 1994
- Single electron transport and current quantization in a novel quantum dot structureApplied Physics Letters, 1994
- Lateral resonant tunneling through constrictions in a δ -doped GaAs layerApplied Physics Letters, 1994
- Single-electron memoryElectronics Letters, 1993
- Single-electron effects in a point contact using side-gating in delta-doped layersApplied Physics Letters, 1992
- Determination of Coulomb-blockade resistances and observation of the tunneling of single electrons in small-tunnel-junction circuitsPhysical Review Letters, 1991
- Quantized current in a quantum-dot turnstile using oscillating tunnel barriersPhysical Review Letters, 1991
- Single-electron charging and periodic conductance resonances in GaAs nanostructuresPhysical Review Letters, 1990
- Offset masks for lift-off photoprocessingApplied Physics Letters, 1977