Nonlinear gain effects in strained-layer lasers
- 8 November 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (23) , 1978-1980
- https://doi.org/10.1049/el:19901279
Abstract
The effects of nonlinear gain on the dynamics of a semiconductor laser in which the active region consists of a strained-layer structure are presented. Gain suppression is enhanced in the presence of strain, thus reducing the relaxation oscillation frequency in strained-layer lasers at very high optical powers compared with equivalent unstrained structures.Keywords
This publication has 1 reference indexed in Scilit:
- Low Threshold Current InP-Based Strained-Layer 1.55µm LasersPublished by SPIE-Intl Soc Optical Eng ,1988